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      The mechanism of self-healing electrical breakdown in MOS structures

      IEEE Transactions on Electron Devices

      Institute of Electrical and Electronics Engineers (IEEE)

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          Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures

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            Analysis of Electrode Phenomena in the High‐Current Arc

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              Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9383
                1557-9646
                November 1966
                November 1966
                : ED-13
                : 11
                : 788-805
                Article
                10.1109/T-ED.1966.15844
                17c9f1eb-dc48-46e0-bb9f-c387faea468d
                © 1966
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