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Rapid thermal annealing‐induced epitaxy of ion‐implanted amorphous layers on 〈100〉 silicon
Author(s):
J. J. Grob
,
A. Grob
Publication date
Created:
September 1987
Publication date
(Print):
September 1987
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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Silicon thin film solar cells
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Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
L Csepregi
,
E. F. Kennedy
,
T J Gallagher
…
(1977)
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Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
T. W. Sigmon
,
L Csepregi
,
J. Mayer
(1976)
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Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals
R.P. Küllen
,
L Csepregi
,
J.W. Mayer
…
(1977)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
September 1987
Publication date (Print):
September 1987
Volume
: 62
Issue
: 5
Pages
: 1788-1791
Article
DOI:
10.1063/1.339557
SO-VID:
17cf3a16-88a3-4ad1-b55a-a38898f5bfd2
Copyright ©
© 1987
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