2
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      Rapid thermal annealing‐induced epitaxy of ion‐implanted amorphous layers on 〈100〉 silicon

      ,
      Journal of Applied Physics
      AIP Publishing

      Read this article at

      ScienceOpenPublisher
      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references18

          • Record: found
          • Abstract: not found
          • Article: not found

          Reordering of amorphous layers of Si implanted with31P,75As, and11B ions

            Bookmark
            • Record: found
            • Abstract: not found
            • Article: not found

            Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon

              Bookmark
              • Record: found
              • Abstract: not found
              • Article: not found

              Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals

                Bookmark

                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                September 1987
                September 1987
                : 62
                : 5
                : 1788-1791
                Article
                10.1063/1.339557
                17cf3a16-88a3-4ad1-b55a-a38898f5bfd2
                © 1987
                History

                Comments

                Comment on this article