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      Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

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          Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

          We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.
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            ZnO-based transparent thin-film transistors

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              Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                September 27 2004
                September 27 2004
                : 85
                : 13
                : 2541-2543
                Article
                10.1063/1.1790587
                19be56cd-f49f-470a-a1be-54ccf06626d2
                © 2004
                History

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