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      Microstructural and Optical Characterization of Heterostructures of ZnS/CdS and CdS/ZnS Synthesized by Chemical Bath Deposition Method

      1 , 2
      Advances in Materials Science and Engineering
      Hindawi Limited

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          Abstract

          ZnS/glass and CdS/glass single layers and ZnS/CdS and CdS/ZnS heterojunction thin films were deposited by the chemical bath deposition method using zinc acetate and cadmium acetate as the metal ion sources and thioacetamide as a nonmetallic ion source in acidic medium. Na2EDTA was used as a complexing agent to control the free cation concentration. The single layer and heterojunction thin films were characterized with X-ray diffraction (XRD), a scanning electron microscope (SEM), energy dispersive X-ray (EDX), and a UV-VIS spectrometer. The XRD patterns of the CdS/glass thin film deposited on the soda lime glass substrate crystalized in the cubic structure with a single peak along the (111) plane. The ZnS/CdS heterojunction and ZnS/glass single layer thin films were crystalized in the hexagonal ZnS structure. The CdS/ZnS heterojunction thin film is nearly amorphous. The optical analysis results confirmed single band gap values of 2.75 eV and 2.5 eV for ZnS/CdS and CdS/ZnS heterojunction thin films, respectively. The CdS/glass and CdS/ZnS thin films have more imaginary dielectric components than the real part. The optical conductivity of the single layer and heterojunction films is in the order of 10 15 1/s. The optical study also confirmed refractive index values between 2 and 2.7 for ZnS/glass, ZnS/CdS, and CdS/ZnS thin films for incident photon energies between 1.2 eV and 3.8 eV. The surface morphology studies revealed compacted spherical grains covering the substrate surfaces with few cracks on ZnS/glass, ZnS/CdS, and CdS/glass and voids on CdS/ZnS thin films. The EDX result confirmed nearly 1 : 1 metallic to nonmetallic ion ratio in the single-layered thin films and the dominance of Zn ion over Cd ion in both ZnS/CdS and CdS/ZnS heterojunction thin films.

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          Optical Processes in Semiconductors

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            X-Ray Diffraction Crystallography

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              WS 2 : A New Window Layer Material for Solar Cell Application

              Radio frequency (RF) magnetron sputtering was used to deposit tungsten disulfide (WS2) thin films on top of soda lime glass substrates. The deposition power of RF magnetron sputtering varied at 50, 100, 150, 200, and 250 W to investigate the impact on film characteristics and determine the optimized conditions for suitable application in thin-film solar cells. Morphological, structural, and opto-electronic properties of as-grown films were investigated and analyzed for different deposition powers. All the WS2 films exhibited granular morphology and consisted of a rhombohedral phase with a strong preferential orientation toward the (101) crystal plane. Polycrystalline ultra-thin WS2 films with bandgap of 2.2 eV, carrier concentration of 1.01 × 1019 cm−3, and resistivity of 0.135 Ω-cm were successfully achieved at RF deposition power of 200 W. The optimized WS2 thin film was successfully incorporated as a window layer for the first time in CdTe/WS2 solar cell. Initial investigations revealed that the newly incorporated WS2 window layer in CdTe solar cell demonstrated photovoltaic conversion efficiency of 1.2% with Voc of 379 mV, Jsc of 11.5 mA/cm2, and FF of 27.1%. This study paves the way for WS2 thin film as a potential window layer to be used in thin-film solar cells.
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                Author and article information

                Contributors
                Journal
                Advances in Materials Science and Engineering
                Advances in Materials Science and Engineering
                Hindawi Limited
                1687-8442
                1687-8434
                November 20 2020
                November 20 2020
                : 2020
                : 1-11
                Affiliations
                [1 ]Bule Hora University, Physics Department, Bule Hora, Ethiopia
                [2 ]Hawassa University, Physics Department, Hawassa, Ethiopia
                Article
                10.1155/2020/1401689
                1a8c0035-f29f-41e5-ba04-3c1c95c10f58
                © 2020

                https://creativecommons.org/licenses/by/4.0/

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