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      Carrier lifetimes in silicon

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          Unusually low surface-recombination velocity on silicon and germanium surfaces.

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            Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface

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              A fast, preparation‐free method to detect iron in silicon

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                00189383
                Jan. 1997
                : 44
                : 1
                : 160-170
                Article
                10.1109/16.554806
                1bcd7af9-35a5-4e80-9b4b-331b3f27fbf5
                © 1997
                History

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