The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption

Adams, Alfred R.; Asada, Masahiro; Suematsu, Yasuharu; Arai, Shigehisa

doi:10.1143/JJAP.19.L621

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The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption

Author(s): Alfred R. Adams , Masahiro Asada , Yasuharu Suematsu , Shigehisa Arai

Publication date Created: October 1980

Publication date (Print): October 1980

Journal: Japanese Journal of Applied Physics

Publisher: Japan Society of Applied Physics

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Journal ID (publisher-id): JAPNDE

Title: Japanese Journal of Applied Physics

Abbreviated Title: Jpn. J. Appl. Phys.

Publisher: Japan Society of Applied Physics

ISSN (Print): 0021-4922

ISSN (Electronic): 1347-4065

Publication date Created: October 1980

Publication date (Print): October 1980

Volume: 19

Issue: 10

Pages: L621-L624

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DOI: 10.1143/JJAP.19.L621

SO-VID: 1c301d6f-4a76-428e-b8d7-9baceee7b58b

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The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption

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