Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy

Watson, G. P.; Xie, Y H; Fitzgerald, E. A.; Monroe, Don; Silverman, P. J.; Thiel, F. A.

doi:10.1063/1.110547

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Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy

Author(s): Y. H. Xie , Don Monroe , E. A. Fitzgerald , P. J. Silverman , F. A. Thiel , G. P. Watson

Publication date Created: October 18 1993

Publication date (Print): October 18 1993

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Surfactants in epitaxial growth.

(1989)

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Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

E. Fitzgerald (1992)

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High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

H. -J. Herzog, B Hollander, G. Abstreiter … (1992)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: October 18 1993

Publication date (Print): October 18 1993

Volume: 63

Issue: 16

Pages: 2263-2264

Article

DOI: 10.1063/1.110547

SO-VID: 1d4f653d-28a7-4e6f-a2f3-25cf23f7544e

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Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy

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Most cited references 8

Surfactants in epitaxial growth.

Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

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