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Thin-film ferroelectric materials and their applications

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Nature Reviews Materials

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      Origin of ferroelectricity in perovskite oxides

       Ronald Cohen (1992)
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        Macroscopic polarization in crystalline dielectrics: the geometric phase approach

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          Room-temperature ferroelectricity in strained SrTiO3.

          Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T(c)) is traditionally accomplished by chemical substitution-as in Ba(x)Sr(1-x)TiO(3), the material widely investigated for microwave devices in which the dielectric constant (epsilon(r)) at GHz frequencies is tuned by applying a quasi-static electric field. Heterogeneity associated with chemical substitution in such films, however, can broaden this phase transition by hundreds of degrees, which is detrimental to tunability and microwave device performance. An alternative way to adjust T(c) in ferroelectric films is strain. Here we show that epitaxial strain from a newly developed substrate can be harnessed to increase T(c) by hundreds of degrees and produce room-temperature ferroelectricity in strontium titanate, a material that is not normally ferroelectric at any temperature. This strain-induced enhancement in T(c) is the largest ever reported. Spatially resolved images of the local polarization state reveal a uniformity that far exceeds films tailored by chemical substitution. The high epsilon(r) at room temperature in these films (nearly 7,000 at 10 GHz) and its sharp dependence on electric field are promising for device applications.
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            Author and article information

            Journal
            Nature Reviews Materials
            Nat. Rev. Mater.
            Springer Nature
            2058-8437
            November 15 2016
            November 15 2016
            : 2
            : 2
            : 16087
            10.1038/natrevmats.2016.87
            © 2016
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