Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system

Tsang, J. C.; Iyer, S S; Eberl, K; Zöllner, S; LeGoues, F. K.

doi:10.1063/1.106774

Record: found
Abstract: not found
Article: not found

Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system

Author(s): K. Eberl , S. S. Iyer , S. Zollner , J. C. Tsang , F. K. LeGoues

Publication date Created: June 15 1992

Publication date (Print): June 15 1992

Journal: Applied Physics Letters

Publisher: AIP Publishing

Read this article at

ScienceOpenPublisher

Bookmark

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Related collections

Most cited references 14

Record: found
Abstract: not found
Article: not found

Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

R. People (1986)

0 comments Cited 208 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: not found
Article: not found

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

G.J. Scilla, J.Y.-C. Sun, J.N. Burghartz … (1990)

0 comments Cited 125 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: not found
Article: not found

Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering

P. Pukite, R Tromp, M. Copel … (1989)

0 comments Cited 55 times – based on 0 reviews      Review now

Bookmark

All references

Author and article information

Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: June 15 1992

Publication date (Print): June 15 1992

Volume: 60

Issue: 24

Pages: 3033-3035

Article

DOI: 10.1063/1.106774

SO-VID: 1f2adc93-5cef-43ef-a5b6-3b0aa66d97d5

History

Data availability:

Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system

Read this article at

Related collections

HR-EBSD (High Resolution - Electron Back Scatter Diffraction)

Most cited references 14

Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering

Author and article information

Journal

Article

History

Comments

Comment on this article

Similar content 3,624

Cited by 78

Most referenced authors 110