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      Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

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          Journal
          Journal ID (publisher-id): JAPNDE
          Title: Japanese Journal of Applied Physics
          Abbreviated Title: Jpn. J. Appl. Phys.
          Publisher: Japan Society of Applied Physics
          ISSN (Print): 0021-4922
          ISSN (Electronic): 1347-4065
          Publication date Created: November 2007
          Publication date (Print): November 2007
          Volume: 46
          Issue: 11
          Pages: 7217-7220
          Article
          DOI: 10.1143/JJAP.46.7217
          SO-VID: 1f52aee2-73fb-4b12-8659-cde9d5602100
          Copyright © © 2007
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