Characteristics of ferroelectric-ferroelastic domains in N{\'e}el-type skyrmion host GaV\(_4\)S\(_8\)

Abstract

GaV\(_4\)S\(_8\) is a multiferroic semiconductor hosting N{\'e}el-type magnetic skyrmions dressed with electric polarization. At T\(_s\) = 42K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below T\(_s\), ferroelectric domains are formed with the electric polarization pointing along any of the four \(\left< 111 \right>\) axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the N{\'e}el-type skyrmion lattice emerging below T\(_C\)=13\:K, the characteristics of polar domains in GaV\(_4\)S\(_8\) have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV\(_4\)S\(_8\) using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm-1.2 \(\mu\)m. We expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manupulation of N{\'e}el-type skyrmions.