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      A rapid room temperature chemical route for the synthesis of graphene: metal-mediated reduction of graphene oxide

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          Is Open Access

          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            Synthesis of water soluble graphene.

            A facile and scalable preparation of aqueous solutions of isolated, sparingly sulfonated graphene is reported. (13)C NMR and FTIR spectra indicate that the bulk of the oxygen-containing functional groups was removed from graphene oxide. The electrical conductivity of thin evaporated films of graphene (1250 S/m) relative to similarly prepared graphite (6120 S/m) implies that an extended conjugated sp (2) network is restored in the water soluble graphene.
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              Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics

              We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-ordered sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.
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                Author and article information

                Journal
                CHCOFS
                Chemical Communications
                Chem. Commun.
                Royal Society of Chemistry (RSC)
                1359-7345
                1364-548X
                2012
                2012
                : 48
                : 12
                : 1787
                Article
                10.1039/c2cc16031e
                20adc5e1-53e6-4e04-b04e-8e22990325b0
                © 2012
                History
                Product
                Self URI (article page): http://xlink.rsc.org/?DOI=c2cc16031e

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