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      Giant flexoelectric effect through interfacial strain relaxation.

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          Abstract

          Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m(-1) by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

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          Author and article information

          Journal
          Philos Trans A Math Phys Eng Sci
          Philosophical transactions. Series A, Mathematical, physical, and engineering sciences
          The Royal Society
          1364-503X
          1364-503X
          Oct 28 2012
          : 370
          : 1977
          Affiliations
          [1 ] Research Center for Functional Interfaces, Department of Physics and Astronomy, Seoul National University, Korea.
          Article
          rsta.2012.0200
          10.1098/rsta.2012.0200
          22987037
          21e40d46-f4f7-4473-974a-ef0018379213
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