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      Epitaxial growth of CeO2layers on silicon

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      Applied Physics Letters
      AIP Publishing

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          MBE‐grown fluoride films: A new class of epitaxial dielectrics

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            Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature

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              Single-crystal films of silicon on insulators

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                April 02 1990
                April 02 1990
                : 56
                : 14
                : 1332-1333
                Article
                10.1063/1.103202
                21e8b402-626d-4376-83c9-86bed2adffd1
                © 1990
                History

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