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      Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors

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          Abstract

          We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 10 3 to 10 4 cm 2/(V × sec) by varying the ditertiarybutyl selenide (DtBSe) precursor line pressure from 0 to 0.4 Torr, leading to an increase of the carrier density in the transistor channel of more than two orders of magnitude. By keeping the DtBSe line pressure at 0.1 Torr, the carrier density in the nanowire channel measures ≈ 5 × 10 17 cm -3 ensuring the best peak transconductances (> 100 mS/m) together with very low resistivity values (70 Ω × μm) and capacitances in the attofarad range. These results are particularly relevant for further optimization of the nanowire-FET terahertz detectors recently demonstrated.

          PACS: 73.63.-b, 81.07.Gf, 85.35.-p

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          Coaxial silicon nanowires as solar cells and nanoelectronic power sources.

          Bozhi Tian, Xiaolin Zheng, Thomas Kempa … (2007)
          Solar cells are attractive candidates for clean and renewable power; with miniaturization, they might also serve as integrated power sources for nanoelectronic systems. The use of nanostructures or nanostructured materials represents a general approach to reduce both cost and size and to improve efficiency in photovoltaics. Nanoparticles, nanorods and nanowires have been used to improve charge collection efficiency in polymer-blend and dye-sensitized solar cells, to demonstrate carrier multiplication, and to enable low-temperature processing of photovoltaic devices. Moreover, recent theoretical studies have indicated that coaxial nanowire structures could improve carrier collection and overall efficiency with respect to single-crystal bulk semiconductors of the same materials. However, solar cells based on hybrid nanoarchitectures suffer from relatively low efficiencies and poor stabilities. In addition, previous studies have not yet addressed their use as photovoltaic power elements in nanoelectronics. Here we report the realization of p-type/intrinsic/n-type (p-i-n) coaxial silicon nanowire solar cells. Under one solar equivalent (1-sun) illumination, the p-i-n silicon nanowire elements yield a maximum power output of up to 200 pW per nanowire device and an apparent energy conversion efficiency of up to 3.4 per cent, with stable and improved efficiencies achievable at high-flux illuminations. Furthermore, we show that individual and interconnected silicon nanowire photovoltaic elements can serve as robust power sources to drive functional nanoelectronic sensors and logic gates. These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.
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            InAs/InP radial nanowire heterostructures as high electron mobility devices.

            Xiaocheng Jiang, Fang Qian, S. Nam … (2007)
            Radial core/shell nanowires (NWs) represent an important class of one-dimensional (1D) systems with substantial potential for exploring fundamental materials electronic and photonic properties. Here, we report the rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers. Transmission electron microscopy studies revealed single-crystal InAs cores with epitaxial InP shells 2-3 nm in thickness, and energy-dispersive X-ray spectroscopy analysis further confirmed the composition of the designed heterostructure. Room-temperature electrical measurements on InAs/InP NW field-effect transistors (NWFETs) showed significant improvement in the on-current and transconductance compared to InAs NWFETs fabricated in parallel, with a room-temperature electron mobility, 11,500 cm(2)/Vs, substantially higher than other synthesized 1D nanostructures. In addition, NWFET devices configured with integral high dielectric constant gate oxide and top-gate structure yielded scaled on-currents up to 3.2 mA/microm, which are larger than values reported for other n-channel FETs. The design and realization of high electron mobility InAs/InP NWs extends our toolbox of nanoscale building blocks and opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.
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              Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors.

              Wojciech Knap, Fabio Beltram, Daniele Ercolani … (2012)
              The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 × 10(-9) W/(Hz)(1/2) at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection. © 2011 American Chemical Society
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                Author and article information

                Journal
                Journal ID (nlm-ta): Nanoscale Res Lett
                Journal ID (iso-abbrev): Nanoscale Res Lett
                Title: Nanoscale Research Letters
                Publisher: Springer
                ISSN (Print): 1931-7573
                ISSN (Electronic): 1556-276X
                Publication date Collection: 2012
                Publication date (Electronic): 28 February 2012
                Volume: 7
                Issue: 1
                Page: 159
                Affiliations
                [1 ]NEST, Istituto Nanoscienze-Consiglio Nazionale delle Ricerche (CNR) and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa, 56127, Italy
                Article
                Publisher ID: 1556-276X-7-159
                DOI: 10.1186/1556-276X-7-159
                PMC ID: 3311085
                PubMed ID: 22373361
                SO-VID: 22868565-e3b7-40ce-a4b7-05b0c7501f47
                Copyright © Copyright ©2012 Viti et al; licensee Springer.
                License:

                This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

                History
                Date received : 4 November 2011
                Date accepted : 28 February 2012
                Categories
                Subject: Nano Express

                ScienceOpen disciplines: Nanomaterials
                Keywords: field effect transistors,transport,nanowires,inas,se-doping
                Data availability:
                ScienceOpen disciplines: Nanomaterials
                Keywords: field effect transistors, transport, nanowires, inas, se-doping

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