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      Radiatively Limited Dephasing and Exciton Dynamics in MoSe 2 Monolayers Revealed with Four-Wave Mixing Microscopy

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          Abstract

          By implementing four-wave mixing (FWM) microspectroscopy, we measure coherence and population dynamics of the exciton transitions in monolayers of MoSe 2. We reveal their dephasing times T 2 and radiative lifetime T 1 in a subpicosecond (ps) range, approaching T 2 = 2 T 1 and thus indicating radiatively limited dephasing at a temperature of 6 K. We elucidate the dephasing mechanisms by varying the temperature and by probing various locations on the flake exhibiting a different local disorder. At the nanosecond range, we observe the residual FWM produced by the incoherent excitons, which initially disperse toward the dark states but then relax back to the optically active states within the light cone. By introducing polarization-resolved excitation, we infer intervalley exciton dynamics, revealing an initial polarization degree of around 30%, constant during the initial subpicosecond decay, followed by the depolarization on a picosecond time scale. The FWM hyperspectral imaging reveals the doped and undoped areas of the sample, allowing us to investigate the neutral exciton, the charged one, or both transitions at the same time. In the latter, we observe the exciton–trion beating in the coherence evolution indicating their coherent coupling.

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          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            Atomically thin MoS2: A new direct-gap semiconductor

            The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 1000 compared with the bulk material.
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              Electronics based on two-dimensional materials.

              The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.
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                Author and article information

                Journal
                Nano Lett
                Nano Lett
                nl
                nalefd
                Nano Letters
                American Chemical Society
                1530-6984
                1530-6992
                12 August 2016
                14 September 2016
                12 August 2017
                : 16
                : 9
                : 5333-5339
                Affiliations
                []Univ. Grenoble Alpes , F-38000 Grenoble, France
                []CNRS, Institut Néel , “Nanophysique et Semiconducteurs” group, F-38000 Grenoble, France
                [§ ]Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL , 25 Av. des Martyrs, 38042 Grenoble, France
                []Institute of Experimental Physics, Faculty of Physics, University of Warsaw , ul. Pasteura 5, 02-093 Warsaw, Poland
                []Cardiff University School of Physics and Astronomy , The Parade, Cardiff CF24 3AA, United Kingdom
                Author notes
                Article
                10.1021/acs.nanolett.6b01060
                5518748
                27517124
                22c0b7fb-2472-4db2-a895-0b26d9c81b39
                Copyright © 2016 American Chemical Society

                This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.

                History
                : 11 March 2016
                : 04 August 2016
                Categories
                Letter
                Custom metadata
                nl6b01060
                nl-2016-010607

                Nanotechnology
                Nanotechnology

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