Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission

People, R.; Cho, A. Y.; Sivco, D. L.; Wecht, K. W.; Jayaraman, A.

doi:10.1063/1.99554

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Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission

Author(s): R. People , A. Jayaraman , K. W. Wecht , D. L. Sivco , A. Y. Cho

Publication date Created: June 20 1988

Publication date (Print): June 20 1988

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Electron-Hole Liquids in Semiconductors

W. F. Brinkman, T. M. Rice (1973)

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Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling

R. People, A. Y. Cho, K. Alavi … (1983)

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Ultrahigh pressures

A. Jayaraman (1986)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: June 20 1988

Publication date (Print): June 20 1988

Volume: 52

Issue: 25

Pages: 2124-2126

Article

DOI: 10.1063/1.99554

SO-VID: 246328ba-cff8-4ab3-90b5-1165bdb39061

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Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission

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Most cited references 18

Electron-Hole Liquids in Semiconductors

Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling

Ultrahigh pressures

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