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      Influence of Ti and Cr Adhesion Layers on Ultrathin Au Films

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          Most cited references 41

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          Single-layer MoS2 transistors.

          Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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            Microstructural evolution during film growth

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              Revised structure zone model for thin film physical structure

               R Roy,  R. Messier,  A P Giri (1984)
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                Author and article information

                Contributors
                Journal
                ACS Applied Materials & Interfaces
                ACS Appl. Mater. Interfaces
                American Chemical Society (ACS)
                1944-8244
                1944-8252
                October 12 2017
                October 25 2017
                October 11 2017
                October 25 2017
                : 9
                : 42
                : 37374-37385
                Affiliations
                [1 ]DTU Danchip/Cen, Technical University of Denmark, Ørsteds Plads, Building 347, 2800 Kgs. Lyngby, Denmark
                Article
                10.1021/acsami.7b10136
                248814a8-5567-481f-8ff1-e14383a32e9b
                © 2017
                Product

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