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A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns
proceedings-article
T. Sumi ,
N. Moriwaki ,
G. Nakane ,
T. Nakakuma ,
Y. Judai ,
Y. Uemoto ,
Y. Nagano ,
S. Hayashi ,
M. Azuma ,
E. Fujii ,
S.-I. Katsu ,
T. Otsuki ,
L. McMillan ,
C. Paz de Araujo ,
G. Kano
IEEE International Solid-State Circuits Conference - ISSCC '94 (ISSCC-94)
16-18 Feb. 1994
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