3
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: not found
      • Article: not found

      First-principles calculation of carrier-phonon scattering in\(n\)-type\({\text{Si}}_{1-x}{\text{Ge}}_{x}\)alloys

      ,
      Physical Review B
      American Physical Society (APS)

      Read this article at

      ScienceOpenPublisher
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Related collections

          Most cited references28

          • Record: found
          • Abstract: not found
          • Article: not found

          Theoretical calculations of heterojunction discontinuities in the Si/Ge system

            • Record: found
            • Abstract: not found
            • Article: not found

            Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering

              • Record: found
              • Abstract: not found
              • Article: not found

              The theory and properties of randomly disordered crystals and related physical systems

                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                1098-0121
                1550-235X
                July 2008
                July 3 2008
                : 78
                : 3
                Article
                10.1103/PhysRevB.78.035202
                25349bfe-405c-4517-a8f5-2c567da2d806
                © 2008

                http://link.aps.org/licenses/aps-default-license

                History

                Comments

                Comment on this article

                Related Documents Log