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      Substrates for gallium nitride epitaxy

      Author(s): ,
      Publication date Created:
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      Journal: Materials Science and Engineering: R: Reports
      Publisher: Elsevier BV

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          Nonmetallic crystals with high thermal conductivity

          G.A. Slack (1973)
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            High dislocation densities in high efficiency GaN‐based light‐emitting diodes

            D. Steigerwald, F. Ponce, S. D. Lester … (1995)
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              Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K

              Yozo Tokumaru, Yasumasa Okada (1984)
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                Author and article information

                Journal
                Title: Materials Science and Engineering: R: Reports
                Abbreviated Title: Materials Science and Engineering: R: Reports
                Publisher: Elsevier BV
                ISSN (Print): 0927796X
                Publication date Created: April 2002
                Publication date (Print): April 2002
                Volume: 37
                Issue: 3
                Pages: 61-127
                Article
                DOI: 10.1016/S0927-796X(02)00008-6
                SO-VID: 2552a14d-7017-4f64-91b3-4aa0d6df511a
                Copyright © © 2002
                License:

                http://www.elsevier.com/tdm/userlicense/1.0/

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