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      • Record: found
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      Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

      Author(s): ,
      Publication date (Electronic):
      Journal: Physical Review Letters
      Publisher: American Physical Society (APS)

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          Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

          J. C. Bean, R. People (1985)
          Article 0 comments Cited 386 times – based on 0 reviews     Review now
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            Surfactants in epitaxial growth.

            (1989)
            Article 0 comments Cited 271 times – based on 0 reviews     Review now
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              Phänomenologische Theorie der Kristallabscheidung an Oberflächen. I

              Ernst Bauer (1958)
              Article 0 comments Cited 163 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): PRLTAO
                Title: Physical Review Letters
                Abbreviated Title: Phys. Rev. Lett.
                Publisher: American Physical Society (APS)
                ISSN (Print): 0031-9007
                Publication date Created: April 1990
                Publication date (Electronic): April 16 1990
                Volume: 64
                Issue: 16
                Pages: 1943-1946
                Article
                DOI: 10.1103/PhysRevLett.64.1943
                PubMed ID: 10041534
                SO-VID: 255b19cb-6388-4728-ad66-59ee44c80e65
                Copyright © © 1990
                License:

                http://link.aps.org/licenses/aps-default-license

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