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      Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

      ,
      Physical Review Letters
      American Physical Society (APS)

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          • Record: found
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          Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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            • Abstract: not found
            • Article: not found

            Surfactants in epitaxial growth.

            (1989)
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              Phänomenologische Theorie der Kristallabscheidung an Oberflächen. I

                Author and article information

                Journal
                PRLTAO
                Physical Review Letters
                Phys. Rev. Lett.
                American Physical Society (APS)
                0031-9007
                April 1990
                April 16 1990
                : 64
                : 16
                : 1943-1946
                Article
                10.1103/PhysRevLett.64.1943
                10041534
                255b19cb-6388-4728-ad66-59ee44c80e65
                © 1990

                http://link.aps.org/licenses/aps-default-license

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