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      k⋅p method for strained wurtzite semiconductors

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      Physical Review B

      American Physical Society (APS)

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          Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

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            A Note on the Quantum‐Mechanical Perturbation Theory

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              First-principles calculations of effective-mass parameters of AlN and GaN

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                1095-3795
                July 1996
                July 1996
                : 54
                : 4
                : 2491-2504
                Article
                10.1103/PhysRevB.54.2491
                © 1996
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