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      Percolation models for gate oxide breakdown

      Journal of Applied Physics
      AIP Publishing

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          Most cited references26

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          Fractal Dimension of Dielectric Breakdown

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            Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon

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              Dielectric breakdown in electrically stressed thin films of thermal SiO2

              Eli Harari (1978)
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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                November 15 1999
                November 15 1999
                : 86
                : 10
                : 5757-5766
                Article
                10.1063/1.371590
                25c7a51e-6604-4f67-b33a-a03530de91fb
                © 1999
                History

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