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Percolation models for gate oxide breakdown
Author(s):
J. H. Stathis
Publication date
Created:
November 15 1999
Publication date
(Print):
November 15 1999
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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Exponential Random Graph Models
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26
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Fractal Dimension of Dielectric Breakdown
L. Niemeyer
,
L Pietronero
,
H. J. Wiesmann
(1984)
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Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
E. Cartier
,
D. Arnold
,
D. DiMaria
(1993)
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Dielectric breakdown in electrically stressed thin films of thermal SiO2
Eli Harari
(1978)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
November 15 1999
Publication date (Print):
November 15 1999
Volume
: 86
Issue
: 10
Pages
: 5757-5766
Article
DOI:
10.1063/1.371590
SO-VID:
25c7a51e-6604-4f67-b33a-a03530de91fb
Copyright ©
© 1999
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