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Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers
Author(s):
Kazuki Ohnishi
,
Masaya Kanoh
,
Tomoyuki Tanikawa
,
Shigeyuki Kuboya
,
Takashi Mukai
,
Takashi Matsuoka
Publication date:
2017
Journal:
Appl. Phys. Express
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DOI::
10.7567/APEX.10.101001
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