Design of ion-implanted MOSFET's with very small physical dimensions

Dennard, R.H.; Gaensslen, F.H.; Rideout, V.L.; Bassous, E.; LeBlanc, A.R.

doi:10.1109/JSSC.1974.1050511

Record: found
Abstract: not found
Article: not found

Design of ion-implanted MOSFET's with very small physical dimensions

Author(s): R.H. Dennard , F.H. Gaensslen , V.L. Rideout , E. Bassous , A.R. LeBlanc

Publication date Created: October 1974

Publication date (Print): October 1974

Journal: IEEE Journal of Solid-State Circuits

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Read this article at

ScienceOpenPublisher

Bookmark

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Related collections

Author and article information

Journal

Title: IEEE Journal of Solid-State Circuits

Abbreviated Title: IEEE J. Solid-State Circuits

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0018-9200

Publication date Created: October 1974

Publication date (Print): October 1974

Volume: 9

Issue: 5

Pages: 256-268

Article

DOI: 10.1109/JSSC.1974.1050511

SO-VID: 2607b575-5a3c-4487-83a1-54ea8e85b749

History

Product

Self URI (article page): http://ieeexplore.ieee.org/document/1050511/

Data availability:

Design of ion-implanted MOSFET's with very small physical dimensions

Read this article at

Related collections

SAXS

Author and article information

Journal

Article

History

Product

Comments

Comment on this article

Similar content 2,329

Cited by 425