Shubnikov-de Haas oscillations in SrTiO3\LaAlO3 interface

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Abstract

Quantum magnetic oscillations in SrTiO3/\LaAlO3 interface are observed. The evolution of their frequency and amplitude at various gate voltages and temperatures is studied. The data are consistent with the Shubnikov de-Haas theory. The Hall resistivity rho exhibits nonlinearity at low magnetic field. It is fitted assuming multiple carrier contributions. The comparison between the mobile carrier density inferred from the Hall data and the oscillation frequency suggests multiple valley and spin degeneracy. The small amplitude of the oscillations is discussed in the framework of the multiple band scenario.

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Most cited references 13

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The role of oxygen vacancies in SrTiO3 at the LaAlO3/SrTiO3 interface

, , … (2013)

Strontium titanate, SrTiO3, a widely used substrate material for electronic oxide thin film devices, has provided many interesting features. In a combination with a similar oxide material, LaAlO3, it has recently received great interest. It was suggested that two-dimensional electron gas is formed at the interface between SrTiO3 and LaAlO3, resulting in high electrical conductivity and mobility. In this report we demonstrate that the transport properties in those heterostructures are very sensitive to the deposition parameters during thin film growth. Using cathode- and photoluminescence studies in conjunction with measurements of electrical transport properties and microstructure we show that the electronic properties observed at a LaAlO3/SrTiO3 interface can be explained by oxygen reduced SrTiO3. In addition, we demonstrate that oxygen can be pushed in and out of the sample, but that re-oxygenation of an initially oxygen depleted LaAlO3/SrTiO3 heterostructure is partly prevented by the presence of the film.