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      Novel Spin-texture on the warped Dirac-cone surface states in topological insulators

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          Abstract

          We have investigated the nature of surface states in the Bi2Te3 family of three-dimensional topological insulators using first-principles calculations as well as model Hamiltonians. When the surface Dirac cone is warped due to Dresselhaus spin-orbit coupling in rhombohedral structures, the spin acquires a finite out-of-plane component. We predict a novel in-plane spin-texture of the warped surface Dirac cone with spins not perpendicular to the electron momentum. Our k.p model calculation reveals that this novel in-plane spin-texture requires high order Dresselhaus spin-orbit coupling terms.

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          Topological Insulators

          , (2011)
          Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator, but have protected conducting states on their edge or surface. The 2D topological insulator is a quantum spin Hall insulator, which is a close cousin of the integer quantum Hall state. A 3D topological insulator supports novel spin polarized 2D Dirac fermions on its surface. In this Colloquium article we will review the theoretical foundation for these electronic states and describe recent experiments in which their signatures have been observed. We will describe transport experiments on HgCdTe quantum wells that demonstrate the existence of the edge states predicted for the quantum spin Hall insulator. We will then discuss experiments on Bi_{1-x}Sb_x, Bi_2 Se_3, Bi_2 Te_3 and Sb_2 Te_3 that establish these materials as 3D topological insulators and directly probe the topology of their surface states. We will then describe exotic states that can occur at the surface of a 3D topological insulator due to an induced energy gap. A magnetic gap leads to a novel quantum Hall state that gives rise to a topological magnetoelectric effect. A superconducting energy gap leads to a state that supports Majorana fermions, and may provide a new venue for realizing proposals for topological quantum computation. We will close by discussing prospects for observing these exotic states, a well as other potential device applications of topological insulators.
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            Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

            We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the electronic state changes from a normal to an "inverted" type at a critical thickness \(d_c\). We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss the methods for experimental detection of the QSH effect.
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              Topological Insulators with Inversion Symmetry

              Topological insulators are materials with a bulk excitation gap generated by the spin orbit interaction, and which are different from conventional insulators. This distinction is characterized by Z_2 topological invariants, which characterize the groundstate. In two dimensions there is a single Z_2 invariant which distinguishes the ordinary insulator from the quantum spin Hall phase. In three dimensions there are four Z_2 invariants, which distinguish the ordinary insulator from "weak" and "strong" topological insulators. These phases are characterized by the presence of gapless surface (or edge) states. In the 2D quantum spin Hall phase and the 3D strong topological insulator these states are robust and are insensitive to weak disorder and interactions. In this paper we show that the presence of inversion symmetry greatly simplifies the problem of evaluating the Z_2 invariants. We show that the invariants can be determined from the knowledge of the parity of the occupied Bloch wavefunctions at the time reversal invariant points in the Brillouin zone. Using this approach, we predict a number of specific materials are strong topological insulators, including the semiconducting alloy Bi_{1-x} Sb_x as well as \alpha-Sn and HgTe under uniaxial strain. This paper also includes an expanded discussion of our formulation of the topological insulators in both two and three dimensions, as well as implications for experiments.
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                Author and article information

                Journal
                23 March 2011
                Article
                10.1103/PhysRevB.84.121401
                1103.4675
                26c0580f-b0ed-48da-a953-fae6a076869a

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

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                Custom metadata
                Phys. Rev. B 84 (R), 121401 (2011)
                4 pages, 3 figures
                cond-mat.mes-hall

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