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      • Record: found
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      High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si

      Author(s): , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Defects in epitaxial multilayers

          J.W. Matthews, A.E. Blakeslee (1974)
          Article 0 comments Cited 667 times – based on 0 reviews     Review now
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            Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures

            R. People (1986)
            Article 0 comments Cited 208 times – based on 0 reviews     Review now
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              Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials

              G Feher, J. C. Hensel (1963)
              Article 0 comments Cited 178 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: May 31 1993
                Publication date (Print): May 31 1993
                Volume: 62
                Issue: 22
                Pages: 2853-2855
                Article
                DOI: 10.1063/1.109205
                SO-VID: 27152995-85ae-42aa-8151-0526a5da4620
                Copyright © © 1993
                History

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