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      Dynamic tuning of terahertz atomic lattice vibration via cross-scale mode coupling to nanomechanical resonance in WSe 2 membranes

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          Abstract

          Nanoelectromechanical systems (NEMS) based on atomically-thin tungsten diselenide (WSe 2), benefiting from the excellent material properties and the mechanical degree of freedom, offer an ideal platform for studying and exploiting dynamic strain engineering and cross-scale vibration coupling in two-dimensional (2D) crystals. However, such opportunity has remained largely unexplored for WSe 2 NEMS, impeding exploration of exquisite physical processes and realization of novel device functions. Here, we demonstrate dynamic coupling between atomic lattice vibration and nanomechanical resonances in few-layer WSe 2 NEMS. Using a custom-built setup capable of simultaneously detecting Raman and motional signals, we accomplish cross-scale mode coupling between the THz crystal phonon and MHz structural vibration, achieving GHz frequency tuning in the atomic lattice modes with a dynamic gauge factor of 61.9, the best among all 2D crystals reported to date. Our findings show that such 2D NEMS offer great promises for exploring cross-scale physics in atomically-thin semiconductors.

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          Most cited references38

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          Electronics based on two-dimensional materials.

          The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.
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            Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.

            Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion in mono- to few-layer thickness regime. Molybdenum disulfide (MoS(2)) was recently found to exhibit indirect-to-direct gap transition when the thickness is reduced to a single monolayer. Emerging photoluminescence (PL) from monolayer MoS(2) opens up opportunities for a range of novel optoelectronic applications of the material. Here we report differential reflectance and PL spectra of mono- to few-layer WS(2) and WSe(2) that indicate that the band structure of these materials undergoes similar indirect-to-direct gap transition when thinned to a single monolayer. The transition is evidenced by distinctly enhanced PL peak centered at 630 and 750 nm in monolayer WS(2) and WSe(2), respectively. Few-layer flakes are found to exhibit comparatively strong indirect gap emission along with direct gap hot electron emission, suggesting high quality of synthetic crystals prepared by a chemical vapor transport method. Fine absorption and emission features and their thickness dependence suggest a strong effect of Se p-orbitals on the d electron band structure as well as interlayer coupling in WSe(2).
              • Record: found
              • Abstract: not found
              • Article: not found

              Interlayer Breathing and Shear Modes in Few-Trilayer MoS2 and WSe2

                Author and article information

                Contributors
                bo_xu@uestc.edu.cn
                juanxia@uestc.edu.cn
                zenghui.wang@uestc.edu.cn
                Journal
                Microsyst Nanoeng
                Microsyst Nanoeng
                Microsystems & Nanoengineering
                Nature Publishing Group UK (London )
                2096-1030
                2055-7434
                22 January 2025
                22 January 2025
                2025
                : 11
                : 18
                Affiliations
                [1 ]Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, ( https://ror.org/04qr3zq92) Chengdu, 610054 China
                [2 ]Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, Hubei University, ( https://ror.org/03a60m280) Wuhan, 430062 China
                [3 ]State Key Laboratory of Precision Measuring Technology and Instruments (Tianjin University), ( https://ror.org/012tb2g32) Tianjin, 300350 China
                [4 ]School of Integrated Sciences and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, ( https://ror.org/04qr3zq92) Chengdu, 610054 China
                [5 ]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, ( https://ror.org/04qr3zq92) Chengdu, 610054 China
                Author information
                http://orcid.org/0000-0002-8558-6850
                http://orcid.org/0000-0003-3743-7567
                Article
                827
                10.1038/s41378-024-00827-w
                11754608
                39843422
                289f1de7-f60a-477b-8f60-986f709c60b1
                © The Author(s) 2025

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 8 March 2024
                : 16 June 2024
                : 20 July 2024
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                © Aerospace Information Research Institute, Chinese Academy of Sciences 2025

                nems,nanoscale materials
                nems, nanoscale materials

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