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      Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

      Author(s): , , , ,
      Publication date Created:
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      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

          Kengo Nishiguchi, Hideo Aida, Yoichi Yaguchi … (2008)
          Article 0 comments Cited 137 times – based on 0 reviews     Review now
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            Large-size β-Ga2O3 single crystals and wafers

            Yukio Yoshikawa, Noboru Ichinose, Kiyoshi Shimamura … (2004)
            Article 0 comments Cited 127 times – based on 0 reviews     Review now
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              Metal semiconductor field effect transistor based on single crystal GaN

              D. Olson, M. Asif Khan, J. Kuznia … (1993)
              Article 0 comments Cited 99 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: January 02 2012
                Publication date (Print): January 02 2012
                Volume: 100
                Issue: 1
                Page: 013504
                Article
                DOI: 10.1063/1.3674287
                SO-VID: 29784676-5961-4f01-87b5-c86338c817b4
                Copyright © © 2012
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