Nitrogen ion bombardment of multilayer graphene films grown on Cu foil by LPCVD

Abstract

Multilayer graphene films were synthesized on copper foil by means of low pressure chemical vapor deposition and characterized using Raman spectroscopy. Low energy nitrogen bombardment was performed to form N-doped graphene, which is a metal catalyst method to induce nitrogen disorder in the carbon network. In order to investigate the effect of the nitrogen bombardment on graphene, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy are used. Analysis before and after the bombardment reveals that nitrogen doping of graphene is performed successfully by this method.