Decomposition of trimethylgallium on the gallium‐rich GaAs (100) surface: Implications for atomic layer epitaxy

Shamamian, Vasgen A.; Lykke, Keith R.; Creighton, J Randall; Kay, Bruce D

doi:10.1063/1.103714

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Decomposition of trimethylgallium on the gallium‐rich GaAs (100) surface: Implications for atomic layer epitaxy

Author(s): J. Randall Creighton , Keith R. Lykke , Vasgen A. Shamamian , Bruce D. Kay

Publication date Created: July 16 1990

Publication date (Print): July 16 1990

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Structure of GaAs(2 x 4)-c(2 x 8) determined by scanning tunneling microscopy.

Pashley, Woodall, Friday … (1988)

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Thermal desorption from metal surfaces: A review

David King (1975)

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Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

W. Ranke, P. Drathen, K. Jacobi (1978)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: July 16 1990

Publication date (Print): July 16 1990

Volume: 57

Issue: 3

Pages: 279-281

Article

DOI: 10.1063/1.103714

SO-VID: 2becb8c1-85da-4d19-bbdc-b04c811c4991

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Decomposition of trimethylgallium on the gallium‐rich GaAs (100) surface: Implications for atomic layer epitaxy

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Atomic Force Microscopy

Most cited references 22

Structure of GaAs(2 x 4)-c(2 x 8) determined by scanning tunneling microscopy.

Thermal desorption from metal surfaces: A review

Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES

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