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      Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals

      Science
      American Association for the Advancement of Science (AAAS)

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          Abstract

          Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.

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          Author and article information

          Journal
          Science
          American Association for the Advancement of Science (AAAS)
          August 1998
          : 281
          : 5379
          : 969-971
          Article
          10.1126/science.281.5379.969
          9703506
          2c314ee1-c466-40ea-a0b8-e698168bd241
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