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      Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

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      1 , 2 , a , , 2 , 2
      EPJ Photovoltaics
      EDP Sciences

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          Abstract

          We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD) technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μ c-SiO x :H layers, as well as a MgF 2 anti-reflection coating (ARC) on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P- and N-doped μ c-SiO x :H layers and a MgF 2 ARC.

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          Author and article information

          Journal
          epjpv
          EPJ Photovoltaics
          an Open Access Journal in Photovoltaics
          EPJ Photovolt.
          EDP Sciences
          2105-0716
          26 January 2016
          2016
          26 January 2016
          26 January 2016
          : 7
          : ( publisher-idID: epjpv/2016/01 )
          Affiliations
          [1 ] R&D Center of Thin-Film Technologies in Energetics, , Ioffe Institute 28 Polytekhnicheskaya , 194064 Saint Petersburg, Russia,
          [2 ] LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, , 91128 Palaiseau, France,
          Author notes
          Article
          pv150010
          10.1051/epjpv/2015011
          2c374dfb-0129-4ca3-84c2-fe7a0fa6a6a8
          © Abolmasov et al., published by EDP Sciences, 2016

          This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

          Page count
          Figures: 5, Tables: 7, Equations: 2, References: 36, Pages: 12
          Product
          Self URI (journal page): https://www.epj-pv.org
          Categories
          Semiconductor Thin Films
          Custom metadata
          EPJ Photovoltaics 7, 70302 (2016)
          2016
          2016
          2016

          Sustainable & Green chemistry,Materials technology,Semiconductors,Materials for energy,Technical & Applied physics,Renewable energy

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