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      Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

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      Journal of Applied Physics
      AIP Publishing

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          Gallium vacancies and the yellow luminescence in GaN

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            Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

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              Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                December 1997
                December 1997
                : 82
                : 11
                : 5472-5479
                Article
                10.1063/1.365575
                2c502cf4-8163-47d2-a011-f79179333a54
                © 1997
                History

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