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      SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study

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      Journal of Applied Physics
      AIP Publishing

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          Theoretical calculations of heterojunction discontinuities in the Si/Ge system

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            High-mobility Si and Ge structures

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              Competing relaxation mechanisms in strained layers

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                Author and article information

                Journal
                JAPIAU
                Journal of Applied Physics
                J. Appl. Phys.
                AIP Publishing
                00218979
                2003
                2003
                : 94
                : 12
                : 7892
                Article
                10.1063/1.1628406
                2c960a87-f394-4c92-a9b9-95923e865f61
                © 2003
                History

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