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      Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrO x-Based Structures

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          Abstract

          Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2. The “start point” of this process is in the range of 640–700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

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          Most cited references40

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          Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition

          P. Pai (1986)
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            Visible photoluminescence from nanocrystallite Ge embedded in a glassySiO2matrix: Evidence in support of the quantum-confinement mechanism

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              Effect of Dopants on Zirconia Stabilization-An X-ray Absorption Study: I, Trivalent Dopants

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                Author and article information

                Contributors
                +38-044-5255775 , khomen@ukr.net
                david.lehninger@physik.tu-freiberg.de
                kondratenko@isp.kiev.ua
                s.s.ponomaryov@gmail.com
                gudymen@ukr.net
                tsybrii@isp.kiev.ua
                yukhym@isp.kiev.ua
                kladko@isp.kiev.ua
                j.v.borany@hzdr.de
                johannes.heitmann@physik.tu-freiberg.de
                Journal
                Nanoscale Res Lett
                Nanoscale Res Lett
                Nanoscale Research Letters
                Springer US (New York )
                1931-7573
                1556-276X
                16 March 2017
                16 March 2017
                2017
                : 12
                : 196
                Affiliations
                [1 ]GRID grid.466789.2, , V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, ; 45 Pr.Nauky, 03028 Kyiv, Ukraine
                [2 ]ISNI 0000 0001 0805 5610, GRID grid.6862.a, Institute of Applied Physics, , TU Bergakademie Freiberg, ; D-09596 Freiberg, Germany
                [3 ]ISNI 0000 0001 2158 0612, GRID grid.40602.30, Institute of Ion Beam Physics and Materials Research, , Helmholtz-Zentrum Dresden-Rossendorf, ; D-01314 Dresden, Germany
                Article
                1960
                10.1186/s11671-017-1960-9
                5355413
                28314364
                2ca8913b-35d1-48b0-b8bd-97595b39798e
                © The Author(s). 2017

                Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

                History
                : 30 December 2016
                : 27 February 2017
                Categories
                Nano Express
                Custom metadata
                © The Author(s) 2017

                Nanomaterials
                germanium,zirconium oxide,nanoclusters,phase separation,magnetron sputtering,thin films,x-ray diffraction,ellipsometry,raman scattering,fourier transform infrared spectroscopy,auger electron spectroscopy

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