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      Wide-bandgap semiconductor materials: For their full bloom

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      Journal: Japanese Journal of Applied Physics
      Publisher: Japan Society of Applied Physics

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          Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

          Shuji Nakamura, Takashi Mukai, Masayuki Senoh (1994)
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            InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

            Toshio Matsushita, Shuji Nakamura, Masayuki Senoh … (1996)
            Article 0 comments Cited 523 times – based on 0 reviews     Review now
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              Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

              B. Sverdlov, H Morkoç, S. Strite … (1994)
              Article 0 comments Cited 514 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Japanese Journal of Applied Physics
                Abbreviated Title: Jpn. J. Appl. Phys.
                Publisher: Japan Society of Applied Physics
                ISSN (Print): 0021-4922
                ISSN (Electronic): 1347-4065
                Publication date Created: March 01 2015
                Publication date (Print): March 01 2015
                Volume: 54
                Issue: 3
                Page: 030101
                Article
                DOI: 10.7567/JJAP.54.030101
                SO-VID: 2d6bd434-f36e-4ce4-9dad-72d39de2eac9
                Copyright © © 2015
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