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      Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method

      Author(s): , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Hafnium and zirconium silicates for advanced gate dielectrics

          R. M. Wallace, J. M. Anthony, G. D. Wilk (2000)
          Article 0 comments Cited 221 times – based on 0 reviews     Review now
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            Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds

            M. Michman, M. SCHIEBER, M. Balog … (1977)
            Article 0 comments Cited 73 times – based on 0 reviews     Review now
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              Atomic Layer Epitaxy Growth of TiN Thin Films

              Mikko Ritala (1995)
              Article 0 comments Cited 31 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: December 26 2005
                Publication date (Print): December 26 2005
                Volume: 87
                Issue: 26
                Page: 262901
                Article
                DOI: 10.1063/1.2150250
                SO-VID: 2d89342c-34db-414f-93cf-30ab8de5e52e
                Copyright © © 2005
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