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      Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT

      , , , , , ,
      Microelectronics Reliability
      Elsevier BV

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          Journal
          Microelectronics Reliability
          Microelectronics Reliability
          Elsevier BV
          00262714
          October 2016
          October 2016
          : 65
          : 41-46
          Article
          10.1016/j.microrel.2016.08.008
          2e27a788-c78c-48d2-94c2-3ea742a02fe6
          © 2016

          https://www.elsevier.com/tdm/userlicense/1.0/

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