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      Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides

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          Abstract

          Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction (SOI) in a two-dimensional (2D) electron system immersed in an inversion-asymmetric environment. The SOI induced spin-splitting of the 2D-electron state provides a basis for many theoretically proposed spintronic devices. However, the lack of semiconductors with large Rashba effect hinders realization of these devices in actual practice. Here we report on a giant Rashba-type spin splitting in 2D electron systems which reside at tellurium-terminated surfaces of bismuth tellurohalides. Among these semiconductors, BiTeCl stands out for its isotropic metallic surface-state band with the Gamma-point energy lying deep inside the bulk band gap. The giant spin-splitting of this band ensures a substantial spin asymmetry of the inelastic mean free path of quasiparticles with different spin orientations.

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                Author and article information

                Journal
                09 May 2012
                Article
                10.1103/PhysRevLett.108.246802
                1205.2006
                2ed6d6ae-1019-4408-b261-26985cb451f7

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                Physical Review Letters Volume: 108 Issue: 24 Article Number: 246802 Published: JUN 13 2012
                12 pages, 5 figures
                cond-mat.mtrl-sci

                Condensed matter
                Condensed matter

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