ZrO[sub 2] gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors

Speck, James S.; Stemmer, Susanne; Mishra, Umesh K; No, Kwang-soo; Hansen, Peter J.; Klenov, Dmitri O; Han, Sooyeon; Dora, Yuvaraj

doi:10.1116/1.2167991

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ZrO[sub 2] gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors

Author(s): Yuvaraj Dora , Sooyeon Han , Dmitri Klenov , Peter J. Hansen , Kwang-soo No , Umesh K. Mishra , Susanne Stemmer , James S. Speck

Publication date Created: 2006

Publication date (Print): 2006

Journal: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Publisher: American Vacuum Society

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High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, J. M. Anthony, R. M. Wallace (2001)

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AlGaN/GaN HEMTs-an overview of device operation and applications

U.K. Mishra, P Parikh, Yi-Feng Wu (2002)

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30-W/mm GaN HEMTs by Field Plate Optimization

A. Saxler, P Parikh, U.K. Mishra … (2004)

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Journal ID (publisher-id): JVTBD9

Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Abbreviated Title: J. Vac. Sci. Technol. B

Publisher: American Vacuum Society

ISSN (Print): 10711023

Publication date Created: 2006

Publication date (Print): 2006

Volume: 24

Issue: 2

Page: 575

Article

DOI: 10.1116/1.2167991

SO-VID: 305c6d9f-954d-4e0d-bca8-9d2c76c59cc8

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ZrO[sub 2] gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors

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Synthesis of 2-trifluoromethylated piperidines and azepanes

Most cited references 16

High-κ gate dielectrics: Current status and materials properties considerations

AlGaN/GaN HEMTs-an overview of device operation and applications

30-W/mm GaN HEMTs by Field Plate Optimization

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