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      Raman scattering from coupled plasmon–LO-phonon modes inn-type\({\mathrm{Al}}_{\mathrm{x}}\)$ {\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As

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          Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs

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            Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments

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              Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAs

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                Author and article information

                Journal
                PRBMDO
                Physical Review B
                Phys. Rev. B
                American Physical Society (APS)
                0163-1829
                January 1986
                January 15 1986
                : 33
                : 2
                : 1222-1232
                Article
                10.1103/PhysRevB.33.1222
                30e6b93a-910b-4fdd-b476-b75532330ebc
                © 1986

                http://link.aps.org/licenses/aps-default-license

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