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      Origin of efficiency droop in GaN-based light-emitting diodes

      , , , , , ,
      Applied Physics Letters
      AIP Publishing

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          Light-Emitting Diodes

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            Biaxial strain dependence of exciton resonance energies in wurtzite GaN

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              Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                October 29 2007
                October 29 2007
                : 91
                : 18
                : 183507
                Article
                10.1063/1.2800290
                3197621a-ebdc-46e4-9621-93c42df3e89c
                © 2007
                History

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