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      Spintronics

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      Journal: Annual Review of Condensed Matter Physics
      Publisher: Annual Reviews

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          Magnetic domain-wall racetrack memory.

          Stuart S P Parkin, Masamitsu Hayashi, Luc Thomas (2008)
          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            Magnetic control of ferroelectric polarization.

            T. Kimura, T. Goto, H Shintani … (2003)
            The magnetoelectric effect--the induction of magnetization by means of an electric field and induction of polarization by means of a magnetic field--was first presumed to exist by Pierre Curie, and subsequently attracted a great deal of interest in the 1960s and 1970s (refs 2-4). More recently, related studies on magnetic ferroelectrics have signalled a revival of interest in this phenomenon. From a technological point of view, the mutual control of electric and magnetic properties is an attractive possibility, but the number of candidate materials is limited and the effects are typically too small to be useful in applications. Here we report the discovery of ferroelectricity in a perovskite manganite, TbMnO3, where the effect of spin frustration causes sinusoidal antiferromagnetic ordering. The modulated magnetic structure is accompanied by a magnetoelastically induced lattice modulation, and with the emergence of a spontaneous polarization. In the magnetic ferroelectric TbMnO3, we found gigantic magnetoelectric and magnetocapacitance effects, which can be attributed to switching of the electric polarization induced by magnetic fields. Frustrated spin systems therefore provide a new area to search for magnetoelectric media.
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              Epitaxial BiFeO3 multiferroic thin film heterostructures.

              J. Wang, J B Neaton, H Zheng … (2003)
              Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
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                Author and article information

                Journal
                Title: Annual Review of Condensed Matter Physics
                Abbreviated Title: Annu. Rev. Condens. Matter Phys.
                Publisher: Annual Reviews
                ISSN (Print): 1947-5454
                ISSN (Electronic): 1947-5462
                Publication date Created: August 10 2010
                Publication date (Print): August 10 2010
                Volume: 1
                Issue: 1
                Pages: 71-88
                Article
                DOI: 10.1146/annurev-conmatphys-070909-104123
                SO-VID: 32ec16d5-f073-42c3-8899-5625587605c8
                Copyright © © 2010
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