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      Photoluminescence excitation of the 0.77-eV emission in undoped semi-insulating GaAs

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      Publication date (Electronic):
      Journal: Physical Review B
      Publisher: American Physical Society (APS)

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          Identification of AsGaantisites in plastically deformed GaAs

          H. Ennen, E Weber, U Kaufmann … (1982)
          Article 0 comments Cited 148 times – based on 0 reviews     Review now
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            Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors

            K. Wada, M. Kamińska, J. Lagowski … (1982)
            Article 0 comments Cited 113 times – based on 0 reviews     Review now
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              Compensation mechanisms in GaAs

              J. P. Farges, G. Poiblaud, J. Hallais … (1980)
              Article 0 comments Cited 100 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): PRBMDO
                Title: Physical Review B
                Abbreviated Title: Phys. Rev. B
                Publisher: American Physical Society (APS)
                ISSN (Print): 0163-1829
                Publication date Created: February 1984
                Publication date (Electronic): February 15 1984
                Volume: 29
                Issue: 4
                Pages: 2283-2285
                Article
                DOI: 10.1103/PhysRevB.29.2283
                SO-VID: 32ecad37-0e78-4e7d-84c4-1197b96f3dc8
                Copyright © © 1984
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                http://link.aps.org/licenses/aps-default-license

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