Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry

Abstract

Many concurrent processes occur in highly photoexcited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and formation of Mahan excitons. We disentangle their contributions and dynamics with broadband pump-probe ellipsometry, performed on a ZnO thin film. We directly obtain the real and imaginary parts of the transient dielectric function and compare them with first-principles simulations. The interband and excitonic absorption are partially blocked and screened by the hot-electron occupation of the conduction band and hole occupation of the valence band. Simultaneously, intra-valence-band transitions occur at sub-picosecond time scales after holes scatter to the edge of the Brillouin zone. Our time-resolved ellipsometry experiments with intense UV excitation pave new ways to understanding non-equilibrium charge-carrier dynamics in materials by distinguishing between changes in absorption coefficient and refractive index, thereby separating competing processes. This information will help to overcome the limitations of materials for high-power optical devices that operate in the ultrafast regime.