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      The effects of Si doping in In0.52Al0.48As layers grown lattice matched on InP substrates

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      Journal of Applied Physics

      AIP Publishing

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          Most cited references 15

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          Temperature dependence of the energy gap in semiconductors

           Y.P. Varshni (1967)
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            Effects of As+ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation

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              Band‐gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                August 1995
                August 1995
                : 78
                : 3
                : 1812-1817
                10.1063/1.360214
                © 1995
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