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Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
January 15 1984
January 15 1984
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Most cited references10
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Optical characterization of interface disorder in multi-quantum well structures
A.C. Gossard, C. Weisbuch, R. Dingle … (1981)
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Growth of III–V semiconductors by molecular beam epitaxy and their properties
A.Y. Cho (1983)
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Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
W. Wiegmann, A C Gossard, H L Stormer … (1981)