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      Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy

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      Applied Physics Letters

      AIP Publishing

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          Optical characterization of interface disorder in multi-quantum well structures

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            Growth of III–V semiconductors by molecular beam epitaxy and their properties

             A.Y. Cho (1983)
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              Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                January 15 1984
                January 15 1984
                : 44
                : 2
                : 217-219
                Article
                10.1063/1.94715
                © 1984
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